半导体学报2005，Vol.26Issue(2)：271-275,5.
硅基1.55μm共振腔增强型探测器
Fabrication of 1.55μm Si-Based Resonant Cavity Enhanced Photodetectors
摘要
Abstract
A novel bonding method using silicate gel as bonding medium is developed.High reflective SiO2/Si mirrors deposited on silicon substrates by e-beam deposition are bonded to the active layers at a low temperature of 350℃ without any special treatment on bonding surfaces.The reflectivities of the mirrors can be as high as 99.9%.A Si-based narrow band response InGaAs photodetector is successfully fabricated,with a quantum efficiency of 22.6% at the peak wavelength of 1.54μm,and a full width at half maximum of about 27nm.This method has a great potential for industry processes.关键词
RCE探测器/高量子效率/直接键合/键合介质/InGaAsKey words
RCE photodetector/high quantum efficiency/direct bonding/bonding medium/InGaAs分类
信息技术与安全科学引用本文复制引用
毛容伟,左玉华,李传波,成步文,滕学公,罗丽萍,张合顺,于金中,王启明..硅基1.55μm共振腔增强型探测器[J].半导体学报,2005,26(2):271-275,5.基金项目
国家重点基础研究发展规划(批准号:G2000036603),国家自然科学基金(批准号:90104003,60223001,60376025,60336010)及国家高技术研究发展计划(批准号:2002AA312010)资助项目 （批准号:G2000036603）
