液晶与显示2007，Vol.22Issue(3)：273-277,5.
用表面粗化ITO的欧姆接触提高GaN基LED性能
Improvement of GaN-based Light-emitting Diodes Using Surface-textured Indium-tin-oxide Transparent Ohmic Contacts
摘要
Abstract
To improve the extraction efficiency of GaN-based light-emitting diodes(LEDs),surface-textured Indium-Tin-Oxde(ITO)transparent ohmic contact layers have been fabricated by utilizing inductively coupled plasma etching technology and natural lithography with polystyrene spheres as the etching mask without destroying P-GaN.The morphologies of the textured ITO surface were examined and characterized by a scanning electron microscope.The optimized and detailed parameters of the texturing process are reported.The fabricated LEDs with the surface-textured ITO ohmic contacts produce a luminance intensity that exceeds that of the traditional planar-surface LEDs by around 70%at 20 mA dc current.关键词
GaN基发光二极管/铟锡氧化物/表面粗化/自然光刻Key words
GaN-based light-emitting diodes/indium-tin-oxide/surface textured/natural lithography分类
信息技术与安全科学引用本文复制引用
姚雨,靳彩霞,董志江,孙卓,黄素梅..用表面粗化ITO的欧姆接触提高GaN基LED性能[J].液晶与显示,2007,22(3):273-277,5.基金项目
Supported by Foundations of Pujiang Talented Person Plans(No.05PJ14037) （No.05PJ14037）
Nanotechnology of Shanghai Municipal Science & Technology Committee(No.0552nm042):Shanghai-Applied Materials Research and Deve lopment fund(No.0519) （No.0552nm042）
