首页|期刊导航|半导体学报|Raman scattering studies on PZT thin films for trigonal-tetragonal phase transition

Raman scattering studies on PZT thin films for trigonal-tetragonal phase transitionOA北大核心CSCDCSTPCD

Raman scattering studies on PZT thin films for trigonal-tetragonal phase transition

中文摘要英文摘要

O)T mode were enhanced with the increase of the annealing tem-perature. So, the conclusions were obtained that the trigonal phase turned into a tetragonal phase as temperature increased.

O)T mode were enhanced with the increase of the annealing tem-perature. So, the conclusions were obtained that the trigonal phase turned into a tetragonal phase as temperature increased.

Liang Ting;Li Junhong;Du Wenlong;Xue Chenyang;Zhang Wendong

Key Laboratory of Instrumentation Science & Dynamic Measurement of the Chinese Ministry of Education,North University of China,Taiyuan 030051,ChinaKey Laboratory of Instrumentation Science & Dynamic Measurement of the Chinese Ministry of Education,North University of China,Taiyuan 030051,ChinaKey Laboratory of Instrumentation Science & Dynamic Measurement of the Chinese Ministry of Education,North University of China,Taiyuan 030051,ChinaKey Laboratory of Instrumentation Science & Dynamic Measurement of the Chinese Ministry of Education,North University of China,Taiyuan 030051,ChinaKey Laboratory of Instrumentation Science & Dynamic Measurement of the Chinese Ministry of Education,North University of China,Taiyuan 030051,China

电子信息工程

PZTRaman scatteringphase transition

PZTRaman scatteringphase transition

《半导体学报》 2009 (8)

28-30,3

Project supported by the National High Technology Research and Development Program of China (No. 2006AA040601).

10.1088/1674-4926/30/8/083001

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