半导体学报2009，Vol.30Issue(5)：28-31,4.DOI:10.1088/1674-4926/30/5/054001
Annealing before gate metal deposition related noise performance in AlGaN/GaN HEMTs
Annealing before gate metal deposition related noise performance in AlGaN/GaN HEMTs
摘要
Abstract
For a further improvement of the noise performance in AlGaN/GaN HEMTs, reducing the relatively high gate leakage current is a key issue. In this paper, an experiment was carried out to demonstrate that one method during the device fabrication process can lower the noise. Two samples were treated differently after gate recess etching: one sample was annealed before metal deposition and the other sample was left as it is. From a comparison of their Ig-Vg characteristics, a conclusion could be drawn that the annealing can effectively reduce the gate leakage current. The etching plasma-induced damage removal or reduction after annealing is considered to be the main factor responsible for it. Evidence is given to prove that annealing can increase the Schottky barrier height. A noise model was used to verify that the annealing of the gate recess before the metal deposition is really effective to improve the noise performance of AlGaN/GaN HEMTs.关键词
GaN HEMT/annealing before metal deposition/gate leakage current/noise performanceKey words
GaN HEMT/annealing before metal deposition/gate leakage current/noise performance分类
信息技术与安全科学引用本文复制引用
Pang Lei,Pu Yan,Liu Xinyu,Wang Liang,Li Chengzhan,Liu Jian,Zheng Yingkui,Wei Ke..Annealing before gate metal deposition related noise performance in AlGaN/GaN HEMTs[J].半导体学报,2009,30(5):28-31,4.基金项目
Project supported by the State Key Development Program for Basic Research of China (No.2002CB311903) and the Key Program of the Chinese Academy of Sciences (No.KGCX2-SW-107). （No.2002CB311903）
