半导体学报2007，Vol.28Issue(z1)：28-32,5.
InP外延材料的MBE生长模式
Growth Modes of InP Epilayers Grown by Solid Source Molecular Beam Epitaxy
摘要
Abstract
The surface morphologies of InP epilayers grown by solid source molecular beam epitaxy at different growth temperatures and P/In flux ratios have been systematically studied by atomic force microscopy (AFM). The results show that the remarkable variety of surface morphologies of samples is related to the transition of growth mode. Under a critical growth condition,a transition of growth mode is induced between a two-dimensional (2D) growth mode and a three-dimensional (3D) growth mode.On the basis of these results,a summary phase diagram is proposed for the growth mode of InP epilayers.Under the 2D growth region,high quality InP epilayers are obtained.关键词
固态源分子束外延/InP/生长模式Key words
SSMBE/InP/growth mode分类
数理科学引用本文复制引用
皮彪,舒永春,林耀望,徐波,姚江宏,邢晓东,曲胜春,王占国..InP外延材料的MBE生长模式[J].半导体学报,2007,28(z1):28-32,5.基金项目
天津市应用基础研究基金(批准号:06YFJZJC01100)及国家自然科学基金(批准号:60476042)资助项目Project supported by the Applied Basic Study Foundation of Tianjin (No.06YFJZJC01100) and the National Natural Science Foundation of China (No.60476042) （批准号:06YFJZJC01100）
