电子学报2001，Vol.29Issue(2)：285-286,2.
低温SiGe/Si HBT的研制及性能分析
Fabrication and Characterization of SiGe/Si HBT Operating at Low Temperature
摘要
Abstract
The SiGe/Si HBTs operating at low temperature were fabricated.Thecurrent gain hfe（Ic/Ib）over 16000 and β（ΔIc/ΔIb）over 26000 have been observed at 77K,exceeding those at 290K by about 51 and 73 times,respectively.The temperature dependence of DC characteristics of the HBT between 290K and 77K was described and analyzed.The departure from theoretical expectation of this dependence at very low temperature was discussed.关键词
SiGe/Si HBT/低温：高增益分类
信息技术与安全科学引用本文复制引用
徐晨,沈光地,邹德恕,陈建新,邓军,魏欢,杜金玉,高国..低温SiGe/Si HBT的研制及性能分析[J].电子学报,2001,29(2):285-286,2.基金项目
国家“863”计划(No.863-307-15-4(06)) （No.863-307-15-4(06）
国家973项目(No.G20000683-02) （No.G20000683-02）
国家自然科学基金(No.69876004) （No.69876004）
国家自然科学基金重大项目(No.69896260-06) （No.69896260-06）
北京市科委高技术重点项目和北京市自然科学基金(No.4962005) （No.4962005）
