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Sol-Gel法制备 BaxSr1-xTiO3铁电薄膜化学机制的探讨

金承钰 丁永平 孟中岩

无机材料学报2000,Vol.15Issue(2):287-292,6.
无机材料学报2000,Vol.15Issue(2):287-292,6.

Sol-Gel法制备 BaxSr1-xTiO3铁电薄膜化学机制的探讨

Studies on the Chemical Mechanism of BaxSr1-xTiO3 Ferroelectric Thin Films by Sol-Gel Method

金承钰 1丁永平 2孟中岩1

作者信息

  • 1. 上海大学无机材料系, 上海 201800
  • 2. 上海交通大学, 上海 200030
  • 折叠

摘要

Abstract

FTIR analysis combined with DSC, XRD and AFM experiments was used to study on the chemical mechanism of thermal evolution for BaxSr1-xTiO3 (BST) thin films derived by sol-gel method. Acetylacetone(HAcAc) was introduced as a chelating agent to reduce a rapid hydrolysis rate of Ti-alkoxide, to improve its crystallization path, to decrease its 奵rystallization temperature. And then the densified and crack-free BST thin films with better crystallization were fabricated.

关键词

BST薄膜/sol-gel工艺/FTIR/DSC/XRD/AFM

Key words

BST thin films/sol-gel method/FTIR/DSC/XRD/AFM

分类

数理科学

引用本文复制引用

金承钰,丁永平,孟中岩..Sol-Gel法制备 BaxSr1-xTiO3铁电薄膜化学机制的探讨[J].无机材料学报,2000,15(2):287-292,6.

基金项目

国家自然基金资助项目(59572038) (59572038)

无机材料学报

OA北大核心CSCDCSTPCDSCI

1000-324X

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