半导体学报2009，Vol.30Issue(6)：29-33,5.DOI:10.1088/1674-4926/30/6/063002
Temperature: a critical parameter affecting the optical properties of porous silicon
Temperature: a critical parameter affecting the optical properties of porous silicon
摘要
Abstract
The optical properties of porous silicon (PS) samples fabricated by pulse etching in a temperature rangefrom -40 to 50 ℃ have been investigated using reflectance spectroscopy, photoluminescence spectroscopy, and scanning electron microscopy (SEM). The dependence of the optical parameters, such as the refractive index n and the optical thickness (nd) of PS samples, on the etching temperature has been analyzed in detail. As the etching temperature decreases, n decreases, indicating a higher porosity, and the physical thickness of PS samples also decreases. Meanwhile, the reflectance spectra exhibit a more intense interference band and the interfaces are smoother.In addition, the intensity of the PL emission spectra is dramatically increased.关键词
porous silicon/temperature/optical thickness/photoluminescenceKey words
porous silicon/temperature/optical thickness/photoluminescence分类
信息技术与安全科学引用本文复制引用
Long Yongfu,Ge Jin,Ding Xunmin,Hou Xiaoyuan..Temperature: a critical parameter affecting the optical properties of porous silicon[J].半导体学报,2009,30(6):29-33,5.基金项目
Project supported by the National Natural Science Foundation of China and the Hunan Provincial Natural Science Foundation of China(No.04JJ40031). （No.04JJ40031）
