半导体学报2001，Vol.22Issue(5)：294-598,305.
高阻CdZnTe晶体的退火处理
Crystalline Quality of Cd/Zn Annealing High Resistivity CdZnTe Wafers
李道强 1桑文斌 1钱永彪 1史伟民 1李冬梅 1李万万 1闵嘉华 1刘冬华1
作者信息
摘要
Abstract
In order to improve the performance of CdZnTe γ-ray detector,it is critical to get the crystal with higher resistivity and better quality.Equilibrium partial pressures over Cd1-xZnx melt have been estimated by thermodynamic relationship and Cd0.8Zn0.2Te wafers been annealed under the controlled Cd/Zn partial pressure generated by Cd1-xZnx alloy source instead of Cd source.The results show that when CdZnTe wafers are annealed by Cd0.8Zn0.2 alloy source for 5 days or more at 1069K(PZn=0.122×105Pa and PCd=1.20×105Pa)，the resistivety of the wafer can be raised by one order and IR transmittance by 10% or more；the size and density of Te precipitates are greatly reduced.Any losing of Zn from the surface can be avoided,which leads to the improvement of Zn lateral distribution.Therefore，it is concluded that the Cd0.8Zn0.2Te wafers annealed under controlled Cd/Zn pressures are better than that only under controlled Cd pressure.关键词
CdZnTe热处理/Cd1-xZnx熔体蒸汽压/γ射线探测器引用本文复制引用
李道强,桑文斌,钱永彪,史伟民,李冬梅,李万万,闵嘉华,刘冬华..高阻CdZnTe晶体的退火处理[J].半导体学报,2001,22(5):294-598,305.
