半导体学报2001，Vol.22Issue(3)：295-298,4.
InAs/GaAs自组织量子点激发态的激射
Excited-State Lasing of InAs/GaAs Self-Organized Quantum Dot
汪辉 1牛智川 1王海龙 1王晓东 1封松林1
作者信息
摘要
Abstract
To investigate the origin of stimulated emission of a Quantum Dot (QD) laser, lasers with or without QDs as active region have been grown by MBE.According to the PL and EL properties, the QD energy levels in QD laser are distinctively resolved due to the band filling effect, and the lasing energy is realized at the excited level, which is much lower than that of the laser with only a wetting layer.The reported QD laser has proved to be lasing from the excited state of quantum dots.关键词
自组织量子点/量子点激光器/受激发射/能带填充效应分类
数理科学引用本文复制引用
汪辉,牛智川,王海龙,王晓东,封松林..InAs/GaAs自组织量子点激发态的激射[J].半导体学报,2001,22(3):295-298,4.
