半导体学报2009，Vol.30Issue(2)：30-33,4.DOI:10.1088/1674-4926/30/2/024001
A surface potential-based non-charge-sheet core model for undoped surrounding-gate MOSFETs
A surface potential-based non-charge-sheet core model for undoped surrounding-gate MOSFETs
摘要
Abstract
A surface potential based non-charge-sheet core model for cylindrical undoped surrounding-gate (SRG) MOSFETs is presented. It is based on the exact surface potential solution of Poisson's equation and Pao-Sah's dual integral without the charge-sheet approximation, allowing the SRG-MOSFET characteristics to be adequately described by a single set of the analytic drain current equation in terms of the surface potential evaluated at the source and drain ends. It is valid for all operation regions and traces the transition from the linear to saturation and from the sub-threshold to strong inversion region without fiRing-parameters, and verified by the 3-D numerical simulation.关键词
non-classical MOS transistor/ surrounding-gate MOSFETs/ device physics/ surface potential model/ non-charge-sheet approximationKey words
non-classical MOS transistor/ surrounding-gate MOSFETs/ device physics/ surface potential model/ non-charge-sheet approximation分类
信息技术与安全科学引用本文复制引用
何进,张健,张立宁,马晨月,陈文新..A surface potential-based non-charge-sheet core model for undoped surrounding-gate MOSFETs[J].半导体学报,2009,30(2):30-33,4.基金项目
Project supported by the National Natural Science Foundation of China (No. 60876027), a Competitive Earmarked Grant from the Research Grant Council of Hong Kong SAR (No. HKUST6289/04E), and the International Joint Research Program from Japan (No. NEDOO5/06.EG01). （No. 60876027）
