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多孔硅的XPS研究

王燕 岳瑞峰

分析测试学报2001,Vol.20Issue(1):30-33,4.
分析测试学报2001,Vol.20Issue(1):30-33,4.

多孔硅的XPS研究

XPS Study of Porous Silicon

王燕 1岳瑞峰1

作者信息

  • 1. 清华大学微电子学研究所,
  • 折叠

摘要

Abstract

The surface properties of two kinds of porous silicon(PS)samples—fresh PS which was dipped in HF solution before experiment and the aged PS which has been stored in the air for one year-were examined by X-ray photoelectron spectroscopy. The fresh PS surface has only trace O and F, O exists in the form of OH-, which is related to replacement of F- with OH- in cleaning process. The PS is gradually oxidated on the surface and SiO2 is formed, when it is stored in the air. Therefore, the fresh PS and aged PS have different surface forms, both of them have strong photoluminescence, but they have different origins of luminescence.

关键词

多孔硅/X射线光电子能谱法/芯能级

分类

信息技术与安全科学

引用本文复制引用

王燕,岳瑞峰..多孔硅的XPS研究[J].分析测试学报,2001,20(1):30-33,4.

分析测试学报

OA北大核心CSCD

1004-4957

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