半导体学报2001，Vol.22Issue(3)：304-308,5.
用三点弯方法研究微氮硅单晶机械强度
Mechanical Strength Research by Three-Point Bending Method
in Nitrogen-Doped Silicon Single Crystal
王淦 1杨德仁 1李东升 1杨辉 1李立本 1阙端麟1
作者信息
摘要
Abstract
The mechanical strength of the nitrogen-doped Czochralski(CZ) silicon and conventional CZ silicon at room temperature and their flexure strength at high temperature have been studied by three-point bending method.It is found for the first time that due to the doping of nitrogen，the mechanical strength of silicon increased markedly at room temperature.Pinning effect of nitrogen atoms on dislocations in silicon at high temperature was also confirmed.The effects of the surface condition and the orientation of crystal on the mechanical strength at room temperature were substantiated.The mechanism of nitrogen in silicon increasing the mechanical strength at room temperature has been discussed.关键词
硅/掺杂/机械强度分类
信息技术与安全科学引用本文复制引用
王淦,杨德仁,李东升,杨辉,李立本,阙端麟..用三点弯方法研究微氮硅单晶机械强度[J].半导体学报,2001,22(3):304-308,5.
