半导体学报2009，Vol.30Issue(8)：31-33,3.DOI:10.1088/1674-4926/30/8/083002
Luminescence spectroscopy of ion implanted AlN bulk single crystal
Luminescence spectroscopy of ion implanted AlN bulk single crystal
Li Weiwei 1Zhao Youwen 1Dong Zhiyuan 1Yang Jun 1Hu Weijie 1Ke Jianhong 1Huang Yan 2Gao Zhenhua2
作者信息
- 1. Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
- 2. Institute of High Energy Physics,Chinese Academy of Sciences,Beijing 100049,China
- 折叠
摘要
Abstract
ciency of the impurity in AlN single crystal.关键词
AlN/implantation/impurity/defectKey words
AlN/implantation/impurity/defect分类
信息技术与安全科学引用本文复制引用
Li Weiwei,Zhao Youwen,Dong Zhiyuan,Yang Jun,Hu Weijie,Ke Jianhong,Huang Yan,Gao Zhenhua..Luminescence spectroscopy of ion implanted AlN bulk single crystal[J].半导体学报,2009,30(8):31-33,3.
