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Quantum Confinement Effects in Strained SiGe/Si Multiple Quantum Wells

半导体学报2000，Vol.21Issue(4)：313-316,4.

Quantum Confinement Effects in Strained SiGe/Si Multiple Quantum Wells

作者信息

1. State Key Laboratory on Optoelectronics, Institute of Semiconductors, The Chinese Academy of Science, Beijing 100083, China;State Key Laboratory on Optoelectronics, Institute of Semiconductors, The Chinese Academy of Science, Beijing 100083, China;State Key Laboratory on Optoelectronics, Institute of Semiconductors, The Chinese Academy of Science, Beijing 100083, China;State Key Laboratory on Optoelectronics, Institute of Semiconductors, The Chinese Academy of Science, Beijing 100083, China;State Key Laboratory on Optoelectronics, Institute of Semiconductors, The Chinese Academy of Science, Beijing 100083, China;State Key Laboratory on Optoelectronics, Institute of Semiconductors, The Chinese Academy of Science, Beijing 100083, China;State Key Laboratory on Optoelectronics, Institute of Semiconductors, The Chinese Academy of Science, Beijing 100083, China
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摘要

Abstract

Strained SiGe/Si multiple quantum wells (MQWs) were grown by cold-wall ultrahigh vacuum chemical vapor deposition (UHV/CVD). Photoluminescence measurement was performed to study the exciton energies of strained Si0.84 Ge0.16/Si MQWs with SiGe well widths ranging from 4.2nm to 25.4nm. The confinement energy of 43meV is found in the Si0.84Ge0.16/Si MQWs with well width of 4.2nm. The confinement energy was calculated by solving the problem of a particle confined in a single finite rectangular poteintial well using one band effect mass model. Experimental and theoretical confinement energies are in good agreement

关键词

quantum well/SiGe/quantum confinement effect

Key words

quantum well/SiGe/quantum confinement effect

分类

数理科学

引用本文复制引用

..Quantum Confinement Effects in Strained SiGe/Si Multiple Quantum Wells[J].半导体学报,2000,21(4):313-316,4.

基金项目

Project Supported by the High Technology (863) Research and Development Program Under Grant No. 863-307-15-4(03) and by the National Natural Science Foundation of China Under Grant No. 69896260. （863）

半导体学报

OA北大核心CSCDCSTPCD

ISSN：1674-4926

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