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一种具有高填充因数和动态数字双采样技术的CMOS图像传感器

刘宇 王国裕

半导体学报2006,Vol.27Issue(2):313-317,5.
半导体学报2006,Vol.27Issue(2):313-317,5.

一种具有高填充因数和动态数字双采样技术的CMOS图像传感器

A New CMOS Image Sensor with a High Fill Factor and the Dynamic Digital Double Sampling Technique

刘宇 1王国裕2

作者信息

  • 1. 西安交通大学,西安,710049
  • 2. 中国科学院半导体研究所,北京,100083
  • 折叠

摘要

Abstract

A single CMOS image sensor based on a 0.35μm process along with its design and implementation is introduced. The architecture of an active pixel sensor is used in the chip. The fill factor of a pixel cell can reach 43%,higher than the traditional factor of 30%. Moreover, compared with the conventional method whose fixed pattern noise (FPN) is around 0.5%, a dynamic digital double sampling technique is developed, which possesses simpler circuit architecture and a better FPN suppression outcome. The CMOS image sensor chip is implemented in the 0.35μm mixed signal process of a Chartered by MPW. The experimental results show that the chip operates well,with an FPN of about 0.17%.

关键词

有源像素/CMOS图像传感器/填充因数/动态数字双采样/固定模式噪声

Key words

active pixel/CMOS image sensor/fill factor/dynamic digital double sampling/fixed pattern noise

分类

信息技术与安全科学

引用本文复制引用

刘宇,王国裕..一种具有高填充因数和动态数字双采样技术的CMOS图像传感器[J].半导体学报,2006,27(2):313-317,5.

半导体学报

OA北大核心CSCDCSTPCD

1674-4926

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