半导体学报2001，Vol.22Issue(1)：31-34,4.
离子损伤对等离子体辅助分子束外延生长的GaNAs／GaAs和GaInNAs／GaAs量子阱的影响
Wells Grown by Plasma-Assisted Molecular Beam Epitaxy: Effects of Ion Damage
李联合 1潘钟 1张伟 1林耀望 1王学宇 1吴荣汉1
作者信息
摘要
Abstract
The effects of ion damage on GaNAs/GaAs and GaInNAs/GaAs quantum wells (QWs) grown by plasma-assisted molecular beam epitaxy have been investigated.It is found that ion damage is a key factor affecting the quality of GaNAs and GaInNAs QWs.Obvious appearance of pendello¨sung fringes in X-ray diffraction pattern and remarkable improvement in the optical properties of the samples grown with ion removal magnets are observed.By removing nitrogen ions,the PL intensity of the GaInNAs QW is improved so as to be comparable with that of GaInAs QW.The stronger is the magnetic field,the more obvious the PL intensity improvement would be.关键词
Ga（In）NAs/分子束外延(MBE)/离子损伤/X射线衍射/光致发光分类
信息技术与安全科学引用本文复制引用
李联合,潘钟,张伟,林耀望,王学宇,吴荣汉..离子损伤对等离子体辅助分子束外延生长的GaNAs／GaAs和GaInNAs／GaAs量子阱的影响[J].半导体学报,2001,22(1):31-34,4.
