量子电子学报2000，Vol.17Issue(1)：31-35,5.
质子注入和快速退火对GaAs/AlGaAs量子阱能级结构的调整
Modify of GaAs/AlGaAs Quantum Well by Proton Implantation and Rapid Thermal Annealing
李娜 1李宁1
作者信息
- 1. 中国科学院上海技术物理研究所, 红外物理国家实验室 上海 200083
- 折叠
摘要
Abstract
In this paper we shall demonstrate the use of intermixing in modify of GaAs/AlGaAs quantum-well. The paper shows that proton implantation can achieve large energy shifts after standard annealing procedures. The PL and photoresponse spectrum were measured as a function of ion dose in the range 5×1014～cm-2 to 2.5×1015～cm-2, the peak photoresponse wavelength was tunable between 8.4～μm to 10.2～μm and PL peak from 780～nm to 850～nm.关键词
质子注入/快速退火/GaAs/AlGaAs/量子阱Key words
H+ ion implantation/rapid thermal annealing/GaAs/AlGaAs/QWIP分类
信息技术与安全科学引用本文复制引用
李娜,李宁..质子注入和快速退火对GaAs/AlGaAs量子阱能级结构的调整[J].量子电子学报,2000,17(1):31-35,5.
