发光学报2001，Vol.22Issue(4)：315-318,4.
GaAs(111)衬底上生长的GaN的极性与生长方法和生长条件的关系
Growth Method and Growth Condition Dependence of the Polarity of GaN Grown on the GaAs(111) Substrate
Hasegawa 1F 2Soude 3R3
作者信息
- 1. University of Tsukuba, Institute of Applied Physics,
- 2. National Institute for Research in Inorganic Materials,
- 折叠
摘要
Abstract
Dependence of polarity of hexagonal GaN on that of GaAs (111 ) substrates was investi
gated. GaN grown by MOVPE and MOMBE with a high V/Ⅲ ratio followed polarity of the
GaAs substrate; a layer grown on the (111)A -Ga- surface showed Ga polarity and that on the
(111)B -As-surface showed N polarity. However, GaN grown on GaAs (111 )B surface showed
Ga polarity when the layer was grown by HVPE, MOMBE with a low V/Ⅲ ratio, or with an
AlN intermediate layer. The reason is not made clear yet, but these results suggest that HVPE
growth or an A1N high temperature buffer layer gives a better quality GaN.关键词
GaN/极性控制/生长方法/生长条件分类
信息技术与安全科学引用本文复制引用
Hasegawa,F,Soude,R..GaAs(111)衬底上生长的GaN的极性与生长方法和生长条件的关系[J].发光学报,2001,22(4):315-318,4.
