中国电子科技2007，Vol.5Issue(4)：316-319,4.
Studies on Dielectric Properties of Silicon Nitride at High Temperature
Studies on Dielectric Properties of Silicon Nitride at High Temperature
Ting Zhang 1Shu-Ren Zhang 1Meng-Qiang Wu 1Wei-Jun Sang 1Zheng-Ping Gao 1Zhong-Ping Li2
作者信息
- 1. State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054,China
- 2. Beijing Aerospace Research Institutes of Materials and Processing Technology, Beijing, China
- 折叠
摘要
Abstract
In this paper, the dielectric properties of silicon nitride are studied using the dielectric polarization theories. According to the developed dielectric models, the temperature dependence of dielectric constant and loss of silicon nitride is mainly analyzed. In addition, the impact of Li+, K+, Ca2+, Al3+ and Mg2+ doping on the dielectric properties of silicon nitride are also estimated.关键词
Dielectric properties,impurity ion,silicon nitride.Key words
Dielectric properties,impurity ion,silicon nitride.分类
信息技术与安全科学引用本文复制引用
Ting Zhang,Shu-Ren Zhang,Meng-Qiang Wu,Wei-Jun Sang,Zheng-Ping Gao,Zhong-Ping Li..Studies on Dielectric Properties of Silicon Nitride at High Temperature[J].中国电子科技,2007,5(4):316-319,4.
