| 注册
首页|期刊导航|东南大学学报(英文版)|输出电压低于1 V的无电阻CMOS带隙基准电压源

输出电压低于1 V的无电阻CMOS带隙基准电压源

程剑平 朱卓娅 魏同立

东南大学学报(英文版)2003,Vol.19Issue(4):317-319,3.
东南大学学报(英文版)2003,Vol.19Issue(4):317-319,3.

输出电压低于1 V的无电阻CMOS带隙基准电压源

A resistorless CMOS bandgap reference with below 1 V output

程剑平 1朱卓娅 1魏同立1

作者信息

  • 1. 东南大学微电子中心,南京,210096
  • 折叠

摘要

Abstract

This paper proposes a resistorless CMOS bandgap reference (BGR) circuit capable of generating a voltage less than 1V and presents a high performance start-up circuit that can make the BGR circuit achieve the correct operation point at power on. The simulation with Hspice was carried out using a 0.25 μm CMOS process. The results indicate that the proposed BGR circuit can operate on a 2.2 to 3.3 V power supply and its output voltage has a variation of 11 mV at -10 to 80 ℃.

关键词

带隙基准/启动电路/CMOS/低电压

Key words

bandgap reference/start-up circuit/CMOS/low voltage

分类

信息技术与安全科学

引用本文复制引用

程剑平,朱卓娅,魏同立..输出电压低于1 V的无电阻CMOS带隙基准电压源[J].东南大学学报(英文版),2003,19(4):317-319,3.

东南大学学报(英文版)

1003-7985

访问量0
|
下载量0
段落导航相关论文