红外与毫米波学报2008，Vol.27Issue(4)：317-320,4.
氢离子注入法提高InAsP/InP应变多量子阱发光特性
ENHANCING THE PHOTOLUMINESCENCE OF InAsP/InP STRAINED MULTIPLE QUANTUM WELLS BY H+ IONS IMPLANTATION
摘要
Abstract
InAsP/InP strained multiple quantum wells (SMQWs) were grown by gas source molecular beam epitaxy (GSMBE).The effects of H+ ions implantation on the photoluminescence (PL) of InAsP/InP SMQWs and the effects of rapid thermal annealing (RTA) on the PL of implanted InAsP/InP SMQWs were investigated.Our results show that the quantum wells (QWs) PL intensities increase under lower H+ ions implantation energies (doses) and the QWs PL intensities decrease with the rise of implantation energies (doses).During the implantation process,some tunnelling H+ ions annihilate the interface defects inside the QWs and some H+ ions introduce some damage into the QWs structure.The competition between these two processes influences the QWs PL intensities.After RTA,the implanted QWs PL peak positions are blue shifted compared with that of as-grown sample at low temperature 10K and the quantity of blue shift increases with the rise of implantation energies (doses).It is attributed to the defects diffusion and the intermixing of different elements between the well layer and the barrier layer during RTA.关键词
离子注入/光致发光/量子阱互混Key words
ions implantation/photoluminescence/quantum well intermixing (QWI)分类
数理科学引用本文复制引用
曹萌,吴惠桢,劳燕峰,曹春芳,刘成..氢离子注入法提高InAsP/InP应变多量子阱发光特性[J].红外与毫米波学报,2008,27(4):317-320,4.基金项目
The project is partially supported by the National Natural Science Foundation of China (10474020) （10474020）
