半导体学报2001，Vol.22Issue(3)：317-321,5.
HV/CVD系统Si、SiGe低温掺杂外延
Low Temperature Silicon and Silicon Germanium
Doping Epitaxy by HV/CVD
刘志农 1贾宏勇 1罗广礼 1陈培毅 1林惠旺 1钱佩信1
作者信息
摘要
Abstract
Growth rate and doping concentration，as a function of the flow of doping gases of B2H6-doped SiGe epitaxy and PH3-doped Si epitaxy，have been studied.B concentration is basically proportional to the flow of B2H6.Si0.8Ge0.2 multi-layer films doped with B concentration up to 1019cm-3 have been grown and sharp doping transitions have been obtained,The Ge composition (x=0.20) is stable and flat throughout the entire epi-layer.Growth rate of PH3-doped Si epitaxy decreases with the flow of PH3 and P concentration can reach a peak value of about 6×1018cm-3 when the flow of PH3 is near 1.7sccm.Si multi-layer films with increased and decreased sequence of the flow of PH3 have also been grown respectively to investigate the special characteristics of PH3-doping silicon epitaxy.关键词
SiGe/HBT/HV/CVD分类
信息技术与安全科学引用本文复制引用
刘志农,贾宏勇,罗广礼,陈培毅,林惠旺,钱佩信..HV/CVD系统Si、SiGe低温掺杂外延[J].半导体学报,2001,22(3):317-321,5.
