半导体学报2000，Vol.21Issue(4)：317-324,8.
多晶硅超薄沟道薄膜晶体管研制
A Novel Ultra-Thin Channel Poly-Si TFT Technology
张盛东 1韩汝琦 1关旭东 1刘晓彦 1王阳元1
作者信息
- 1. 北京大学微电子学研究所，北京 100871
- 折叠
摘要
Abstract
A novel low temperature poly-Si (LTPS) ultra-thin channel thin film transistor (UTC-TFT) technology is proposed. The UTC-TFT has an ultra-thin channel region (30nm) and a thick drain/source region (300nm). The ultra-thin channel region that can result in a lower grain-boundary trap density in the channel is connected to the heavily-doped thick drain/ source region through a lightly-doped overlapped region. The overlapped lightly-doped region provides an effective way for the electric field to spread in the channel near the drain at high drain biases, thereby reducing the electric field there significantly. Simulation results show the UTC-TFT experiences a 50% reduction in peak lateral electric field compared to that of the conventional TFT. With the low grain-boundary trap density and low drain electric field, excellent current saturation characteristics and high drain breakdown voltage are achieved in the UTC-TFT. Moreover, this technology provides the complementary LTPS-TFTs with more than 2 times increase in on-current, 3.5 times reduction in off-current compared to the conventional thick channel LTPS TFTs关键词
薄膜晶体管/多晶硅/kink效应/超薄沟道Key words
TFT/poly-silicon/kink-effect/ultra-thin channel分类
信息技术与安全科学引用本文复制引用
张盛东,韩汝琦,关旭东,刘晓彦,王阳元..多晶硅超薄沟道薄膜晶体管研制[J].半导体学报,2000,21(4):317-324,8.
