半导体学报2006，Vol.27Issue(2)：323-327,5.
基于0.25μm MS/RF CMOS工艺的光电单片集成接收机设计
Monolithically Integrated Optoelectronic Receivers Implemented in 0.25μm MS/RF CMOS
摘要
Abstract
A monolithically integrated optoelectronic receiver is presented. A silicon-based photo-diode and receiver circuits are integrated on identical substrates in order to eliminate the parasitics induced by hybrid packaging.Implemented in the present deep sub-micron MS/RF (mixed signal, radio frequency) CMOS,this monolithically OEIC takes advantage of several new features to improve the performance of the photo-diode and eventually the whole OEIC.关键词
单片集成/光电集成电路/CMOS工艺Key words
monolithically integrated/OEIC/CMOS process分类
信息技术与安全科学引用本文复制引用
陈弘达,高鹏,毛陆虹,黄家乐..基于0.25μm MS/RF CMOS工艺的光电单片集成接收机设计[J].半导体学报,2006,27(2):323-327,5.基金项目
国家高技术研究发展计划(批准号:2002AA312240,2003AA312040)和国家自然科学基金(批准号:60536030)资助项目 （批准号:2002AA312240,2003AA312040）
