郑州大学学报(自然科学版)2001，Vol.33Issue(1)：32-35,4.
Si（313）表面电子结构特性的理论研究
Calculation of Electronic States of Si(313) Surface
摘要
Abstract
The theoretical study of the electronic structure of the Si (313)surface is firstly presented. The electronic structure is described by using the Green function method of the scattering theory and adopting the nearest neighbor tight binding sp3s model. Wave-vector-resolved surface densities of states and the surface band structure are obtained. The results show that there are six surface states in the range of -10 eV to 2 eV. Some properties of these surface states are also discussed.关键词
态密度/表面态/散射理论/紧束缚近似/高密勒指数分类
数理科学引用本文复制引用
魏英耐,姚乾凯,徐小树,马丙现,贾瑜..Si（313）表面电子结构特性的理论研究[J].郑州大学学报(自然科学版),2001,33(1):32-35,4.基金项目
河南省教委自然科学基金资助项目. （）
