半导体学报2006，Vol.27Issue(z1)：32-35,4.
射频无线应用的体连接和图形化SOI LDMOSFET的比较
Comparison of Body-Contact and Patterned-SOI LDMOSFETs for RF Wireless Applications
李文钧 1程新红 2宋朝瑞 2陈展飞 1刘军 1孙玲玲1
作者信息
- 1. 杭州电子科技大学微电子CAD研究所,杭州,310018
- 2. 中国科学院上海微系统与信息技术研究所,上海,200050
- 折叠
摘要
Abstract
A novel patterned-SOI LDMOSFET with a silicon window beneath the p-type channel is designed and fabricated for RF power amplifier applications. It has good DC and RF characteristics,with no kink effect on the output performance,an off-state breakdown of up to 13V,fT= 8GHz at a DC bias of VG = 4V and VD= 3.6V.These characteristics are better than those of body-contact SOI LDMOSFETs on the same wafer with the same process conditions.关键词
体接触/图形化SOI/LDMOSFET/射频Key words
body-contact/patterned-SOI/LDMOSFET/RF分类
信息技术与安全科学引用本文复制引用
李文钧,程新红,宋朝瑞,陈展飞,刘军,孙玲玲..射频无线应用的体连接和图形化SOI LDMOSFET的比较[J].半导体学报,2006,27(z1):32-35,4.
