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Analytical models for the base transit time of a bipolar transistor with double base epilayers

Zhang Qian Zhang Yuming Zhang Yimen

半导体学报2009，Vol.30Issue(9)：33-36,4.

半导体学报2009，Vol.30Issue(9)：33-36,4.DOI:10.1088/1674-4926/30/9/094003

Analytical models for the base transit time of a bipolar transistor with double base epilayers

Zhang Qian ¹Zhang Yuming ¹Zhang Yimen¹

作者信息

1. Key Laboratory of Semiconductor Wide Band-Gap Materials and Devices, School of Microelectronics, Xidian University,Xi'an 710071, China
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摘要

Abstract

arriers when transiting the base region and reduce the base transit time. From the simulation results, the base transit time reaches a minimal value when the ratio of L2/L2is about 2.

关键词

4H-SiC/bipolar junction transistors/build-in electric field/base transit time

Key words

4H-SiC/bipolar junction transistors/build-in electric field/base transit time

分类

信息技术与安全科学

引用本文复制引用

Zhang Qian,Zhang Yuming,Zhang Yimen..Analytical models for the base transit time of a bipolar transistor with double base epilayers[J].半导体学报,2009,30(9):33-36,4.

基金项目

Project supported by the National Natural Science Foundation of China (No. 60876061) and the Pre-Research Project (No. 51308040302). （No. 60876061）

半导体学报

OA北大核心CSCDCSTPCDEI

ISSN：1674-4926

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