量子电子学报2003，Vol.20Issue(3)：338-344,7.
量子点量子阱中束缚态的能级结构
Structures of the Energy Levels of the Bound States in a Quantum Dot Quantum Well
摘要
Abstract
Under the effective mass approximation, the energy levels for the bound states of electron andhole in a quantum dot quantum well (QDQW) system are investigated. Numeral calculations on CdS/HgSand ZnS/CdSe QDQW are performed. Results reveal that the curves of the dependence of the eigen-energyon the size of the QDQW have some yielding points, which is obviously different from that in homogenousquantum dot, and the intervals of energy levels for electronic states in CdS/HgS QDQW have maximum atsome certain quantum numbers n, while those for hole states in ZnS/CdSe QDQW increase monotonously,it is due to the difference of the ratios of the effective mass of the materials synthesized the QDQW.关键词
能级结构/量子点量子阱/束缚态Key words
structures of energy levels/quantum dot quantum well/bound states分类
数理科学引用本文复制引用
张立,谢洪鲸,陈传誉,龚映清..量子点量子阱中束缚态的能级结构[J].量子电子学报,2003,20(3):338-344,7.基金项目
This work is supported by Guangdong Provincial Natural Science Foundation of China (NO. 011835). （NO. 011835）
