电子器件2007，Vol.30Issue(2)：353-355,3.
AlGaN/GaN高电子迁移率晶体管大信号I-V特性模型
Analytical Model of Large Signal I-V Characteristics for AlGaN/GaN High Electron Mobility Transistors
摘要
Abstract
The accurate description to the nonlinear current source Ids(Vgs,Vds) is one of the most important part of the large signal model for AlGaN/GaN HEMTs.The relationship between the pinch-off voltage and Vds has been taken into account and there are only three parameters in this model.However the square dependence of Eds on Vgs does not match HEMTs very well.The discrepancy still exists.Considering the relationship between the gate voltage and the drain current as well as the slope changes of drain current Ids with drain voltage Vds at different gate voltages region(SCD),an improved model for AlGaN/GaN high electron mobility transistors (HEMTs) has been proposed.The large signal I-V characteristics of the AlGaN/GaN HEMT device are obtained with this model.The comparison between the calculated values and the experiment measurements demonstrates that the new approach is more accurate than the Materka model to describe the pulsed DC-I-V curve.The drain current Ids depends on Vgs with an index of 2.5.关键词
器件模拟/大信号模型/AlGaN/GaN HEMT/I-V特性Key words
device simulation/large signal model/AlGaN/GaN HEMTs:I-V characteristics分类
信息技术与安全科学引用本文复制引用
常远程,张义门,张玉明,曹全君,王超..AlGaN/GaN高电子迁移率晶体管大信号I-V特性模型[J].电子器件,2007,30(2):353-355,3.基金项目
国家基础项目资助(2002CB311904) （2002CB311904）
