强激光与粒子束2001，Vol.13Issue(3)：353-356,4.
半导体器件HPM损伤脉宽效应机理分析
The mechanism of HPM pulse-duration damage effect on semiconductor component
摘要
Abstract
The mechanism of HPM pulse-duration damage effect on semiconductor component results from heat accumulation and diffusion process in the defect area. The experiential formulae of HPM pulse-duration damage effect in the range of whole pulse-durarion, long pulse-duration as well as short pulse-duration are obtained, which agree with experiments and numerical simulation effect data very well.关键词
半导体器件/HPM/脉冲宽度/损伤效应分类
信息技术与安全科学引用本文复制引用
李平,刘国治,黄文华,王亮平..半导体器件HPM损伤脉宽效应机理分析[J].强激光与粒子束,2001,13(3):353-356,4.
