半导体学报2003，Vol.24Issue(4)：362-365,4.
低温下应变外延层的单层生长
Single Layer Growth of Strained Epitaxy at Low Temperature
段瑞飞 1王宝强 1朱占平 1曾一平1
作者信息
- 1. 中国科学院半导体研究所,新材料部,北京,100083
- 折叠
摘要
Abstract
Contacting mode atomic force microscopy (AFM) is used to measure the In0.35Ga0.65As/GaAs epilayer grown at low temperature (460℃).Unlike the normal layer-by-layer growth (FvdM mode) or self-organized islands growth (SK mode),samples grown under 460℃ are found to be large islands with atomic thick terraces.AFM measurements reveale near one monolayer high steps.This kind of growth is good between FvdM and SK growth modes and can be used to understand the evolution of strained epitaxy from FvdM to SK mode.关键词
InGaAs/GaAs/分子束外延/原子力显微镜/外延层/单层生长Key words
InGaAs/GaAs/molecular beam epitaxy/atomic force microscopy/epilayer/monolayer growth分类
信息技术与安全科学引用本文复制引用
段瑞飞,王宝强,朱占平,曾一平..低温下应变外延层的单层生长[J].半导体学报,2003,24(4):362-365,4.
