半导体学报2002，Vol.23Issue(4)：362-366,5.
使用超声搅拌实现精密KOH各向异性体硅腐蚀
Precision Bulk Micromachining Based on KOH Anisotropic Etching Using Ultrasonic Agitation
陈兢 1刘理天 1李志坚 1谭智敏 1蒋前哨 1方华军 1徐扬 1刘燕翔1
作者信息
- 1. 清华大学微电子学研究所,北京,100084
- 折叠
摘要
Abstract
Ultrasonic agitation is introduced to reduce the surface roughness and improve the etching uniformity in the process of most commonly used KOH anisotropic etching.Etching characteristics of (100) Si are studied and compared with that without agitation source.Smooth pyramid-free surfaces are obtained with the uniform etching depth within the resolution of 1μm on the same wafer being achieved at the same time.The results reveal that the ultrasonic agitation is a very efficient approach for high precision bulk micromachining.关键词
MEMS/各向异性腐蚀/超声搅拌/KOH/表面粗糙度/均匀性/腐蚀速率Key words
MEMS/anisotropic etching/ultrasonic agitation/KOH/surface roughness/uniformity/etching rate分类
信息技术与安全科学引用本文复制引用
陈兢,刘理天,李志坚,谭智敏,蒋前哨,方华军,徐扬,刘燕翔..使用超声搅拌实现精密KOH各向异性体硅腐蚀[J].半导体学报,2002,23(4):362-366,5.
