高技术通讯2001，Vol.11Issue(2)：38-39,2.
MOVPE 生长 InGaN/GaN 单量子阱绿光LED
MOVPE Growth of InGaN/GaN Single Quantum Well Structures Green Light-emitting Diodes
王晓晖 1刘祥林 1陆大成 1袁海荣 1韩培德 1汪度1
作者信息
摘要
Abstract
InGaN green LEDs with single quantum well structures based on Ⅲ-Ⅴ nitrides ar e grown by MOVPE on sapphire substrates. The peak wavelength and the full width a t half-maximum(FWHM ) of the electroluminescence are 530nm and 30nm, respectiv ely. SQW green LEDs are fabricated successfully for the first time in China.关键词
MOVPE/InGaN/单量子阱/绿光LED分类
信息技术与安全科学引用本文复制引用
王晓晖,刘祥林,陆大成,袁海荣,韩培德,汪度..MOVPE 生长 InGaN/GaN 单量子阱绿光LED[J].高技术通讯,2001,11(2):38-39,2.
