半导体学报2007，Vol.28Issue(3)：393-397,5.
低功耗CMOS神经束功能电激励信号产生电路
Low-Power CMOS IC for Function Electrical Stimulation of Nerves
摘要
Abstract
A low-power IC for function electrical stimulation (FES) of nerves is designed for an implantable system and fabricated in CSMC's 0.6μm CMOS technology. The IC can be used for stimulating animals' spinal nerve bundles and other nerves connected with a cuff type electrode. It consists of a pre-amplifier, a main amplifier,and an output stage. According to the neural signal spectrum,the bandwidth of the FES signal generator circuit is defined from 1Hz to 400kHz. The gain of the circuit is about 66dB with an output impedance of 90Ω. The IC can function under a single supply voltage of 3～5V. A rail-to-rail output stage helps to use the coupled power efficiently. The measured time domain performance shows that the bandwidth and the gain of the IC agree with the design. The power consumption is lower than 6mW.关键词
神经信号/CMOS/功能激励/低功耗/神经Key words
neural signal/CMOS/function electrical stimulation/low power/nerve分类
信息技术与安全科学引用本文复制引用
李文渊,王志功,张震宇..低功耗CMOS神经束功能电激励信号产生电路[J].半导体学报,2007,28(3):393-397,5.基金项目
Project supported by the National Natural Science Foundation of China (No. 90377013) 国家自然科学基金资助项目(批准号:90377013) （No. 90377013）
