半导体学报2008，Vol.29Issue(1)：39-44,6.
RTD在压力下的弛豫振荡特性
RTD's Relaxation Oscillation Characteristics with Applied Pressure
摘要
Abstract
The relaxation oscillation characteristics of a resonant tunneling diode (RTD) with applied pressure are reported. The oscillation circuit is simulated and designed by Pspice 8.0, and the measured oscillation frequency is up to 200kHz. Using molecular beam epitaxy (MBE) ,AlAs/InxGa1-xAs/GaAs double barrier resonant tunneling structures (DBRTS) are grown on (100) semi-insulated (SI) GaAs substrate,and the RTD is processed by Au/Ge/Ni/Au metallization and an airbridge structure. Because of the piezoresistive effect of RTD, with Raman spectrum to measure the applied pressure, the relaxation oscillation characteristics have been studied, which show that the relaxation oscillation frequency has approximately a - 17.9kHz/MPa change.关键词
共振隧穿二极管/弛豫振荡/喇曼光谱仪/压阻效应Key words
resonant tunneling diode/ relaxation oscillation/ Raman spectrum/ piezoresistive effect分类
信息技术与安全科学引用本文复制引用
仝召民,薛晨阳,张斌珍,刘俊,乔慧..RTD在压力下的弛豫振荡特性[J].半导体学报,2008,29(1):39-44,6.基金项目
Project supported by the National Natural Science Foundation of China (Nos. 50405025,50535030) （Nos. 50405025,50535030）
国家自然科学基金资助项目(批准号:50405025,50535030) （批准号:50405025,50535030）
