人工晶体学报2005，Vol.34Issue(3)：395-398,4.
固态源MBE系统生长高质量的调制掺杂GaAs结构材料和InP/InP外延材料的兼容性研究
Compatibility Study on Growing High Quality Modulation Doped GaAs and InP/InP Epilayers by Solid Source Molecular Beam Epitaxy
摘要
Abstract
The modulation-doped AlGaAs/GaAs structures ( MD-GaAs ) and InP/InP epilayers have been grown by solid-source molecular beam epitaxy(SSMBE) system. After growing phosphorous contained materials, growth conditions were seriously deteriorated, but by using an appropriate method and optimized growth conditions via Hall measurements, 77K electron mobility of 1.86 × 105cm2/Vs for modulationdoped AlGaAs/GaAs structures, 2.09 × 105cm2/Vs for δ-doping Si:AlGaAs/GaAs structures, 4.57 ×104 cm2/Vs for InP/InP epilayers were achieved. The results show that the InP layer with thickness less than 2.5μm is a material with the highest mobility and the lowest electron concentration reported up to date. It comes true that alternative growth of high quality modulation doped GaAs and phosphorous contained materials (P-contained) in same SSMBE system can be successfully realized.关键词
兼容性/调制掺杂GaAs/InP/InP外延材料/高电子迁移率/分子束外延/固体磷源Key words
compatibility/MD-GaAs material/InP/InP epilayers material/high electron mobility/MBE/solid-phosphorous-source分类
信息技术与安全科学引用本文复制引用
张冠杰,舒永春,皮彪,邢小东,林耀望,姚江宏,王占国,许京军..固态源MBE系统生长高质量的调制掺杂GaAs结构材料和InP/InP外延材料的兼容性研究[J].人工晶体学报,2005,34(3):395-398,4.基金项目
The work supported financially by TEDA College of Naikai University （）
