光学精密工程2005，Vol.13Issue(4)：397-402,6.
ITO thin films prepared by electron beam evaporation with End-Hall ion source assisted without heating to the substrate
ITO thin films prepared by electron beam evaporation with End-Hall ion source assisted without heating to the substrate
GAO Jin-song 1XU Ying 1WANG Xiao-yi 1WANG Tong-tong1
作者信息
- 1. Optical Technology and Research Center,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130022,China
- 折叠
摘要
Abstract
ITO (indium oxide doped with tin) thin films were deposited on glass substrates by using ITO pellet with a composition of w(In2O3)=90% and w(SnO2)=10% by electron beam evaporated with End-Hall ion source assisted without extra heating. The rate of deposition and flow rate of oxygen were measured and changed to obtain the best properties of ITO thin films. Furthermore, the post annealing process was done in vacuum at different annealing temperatures for 2 h and at 400℃ for different keeping time, respectively. The relation between optical, electrical properties and structure was discussed in detail.关键词
ITO film/End-Hall ion source/optical transmittance/sheet resistance/annealingKey words
ITO film/End-Hall ion source/optical transmittance/sheet resistance/annealing分类
数理科学引用本文复制引用
GAO Jin-song,XU Ying,WANG Xiao-yi,WANG Tong-tong..ITO thin films prepared by electron beam evaporation with End-Hall ion source assisted without heating to the substrate[J].光学精密工程,2005,13(4):397-402,6.
