半导体学报2008，Vol.29Issue(3)：397-409,13.
场引晶体管理论:Ⅺ.双极电化电流(薄及厚、纯及不纯基体,单及双MOS栅极)
The Theory of Field-Effect Transistors:XI.The Bipolar Electrochemical Currents(1-2-MOS-Gates on Thin-Thick Pure-Impure Base)
摘要
Abstract
The field-effect transistor is inherently bipolar, having simultaneously electron and hole surface and volume channels and currents. The channels and currents are controlled by one or more externally applied transverse electric fields. It has been known as the unipolar field-effect transistor for 55-years since Shockley's 1952 invention, because the electron-current theory inevitably neglected the hole current from over-specified internal and boundary conditions,such as the electrical neutrality and the constant hole-electrochemical-potential, resulting in erroneous solutions of the internal and terminal electrical characteristics from the electron channel current alone, which are in gross error when the neglected hole current becomes comparable to the electron current, both in subthreshold and strong inversion. This report presents the general theory, that includes both electron and hole channels and currents. The rectangular (x, y, z) parallelepiped transistors,uniform in the width direction (z-axis), with one or two MOS gates on thin and thick, and pure and impure base, are used to illustrate the two-dimensional effects and the correct internal and boundary conditions for the electric and the electron and hole electrochemical potentials. Complete analytical equations of the DC current-voltage characteristics of four common MOS transistor structures are derived without over-specification: the 1-gate on semi-infinite-thick impure-base (the traditional bulk transistor), the 1-gate on thin impure-silicon layer over oxide-insulated silicon bulk(SOI) ,the 1-gate on thin impure-silicon layer deposited on insulating glass (SOI TFT),and the 2-gates on thin pure-base(FinFETs).关键词
双极场引晶体管理论/MOS场引晶体管/并存电子和空穴表面和体积沟道和电流/表面势/两区短沟道理论/双栅不纯基理论Key words
bipolar field-effect transistor theory/ MOS field-effect transistor/ simultaneous electron and hole surface and volume channels and currents/ surface potential/ two-section short-channel theory/ double-gate impure-base theory分类
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薩支唐,揭斌斌..场引晶体管理论:Ⅺ.双极电化电流(薄及厚、纯及不纯基体,单及双MOS栅极)[J].半导体学报,2008,29(3):397-409,13.基金项目
该研究及揭斌斌由CTSAH Associates(CTSA)资助.This investigation and Jie Binbin have been supported by the CTSAH Associates (CTSA) founded by the late Linda Su-Nan Chang Sah,in memory on her 70th year. （CTSA）
