半导体学报2001，Vol.22Issue(4)：398-401,4.
低压金属有机化合物气相外延生长的（AlxGa1－x）0.51In0.49P折射率测量
Measurement of Refractive Indices of (AlxGa1-x)0.51In0.49P Grown by Low Pressure Organometallic Vapor Phase Epitaxy
廉鹏 1马骁宇 2张广泽 2陈良惠2
作者信息
- 1. 北京工业大学电子工程学系,
- 2. 中国科学院半导体研究所,
- 折叠
摘要
Abstract
The refractive indices of disordered (AlxGa1-x)0.51In0.49P,which is grown by low-pressure organometallic vapor phase epitaxy and lattice-matched to GaAs substrate,have been determined by measuring their reflectance spectra when the wavelength ranges between 0.5 to 2.5 micrometer.A single-oscillator dispersion model is used to verify the experiment data and calculate the reflectance spectrum.The refractive indices are used to analyze the waveguide of strain quantum well GaInP/AlGaInP visible laser diode.The simulated far field pattern is consistent with the experimental results very well.关键词
金属有机化合物气相外延/折射率/测量/AlGaInP分类
信息技术与安全科学引用本文复制引用
廉鹏,马骁宇,张广泽,陈良惠..低压金属有机化合物气相外延生长的（AlxGa1－x）0.51In0.49P折射率测量[J].半导体学报,2001,22(4):398-401,4.
