红外与毫米波学报2002，Vol.21Issue(6)：401-407,7.
QUANTUM MECHANICAL MODEL AND SIMULATION OF GaAs/AlGaAs QUANTUM WELL INFRARED PHOTODETECTOR-Ⅱ ELECTRICAL ASPECTS
QUANTUM MECHANICAL MODEL AND SIMULATION OF GaAs/AlGaAs QUANTUM WELL INFRARED PHOTODETECTOR-Ⅱ ELECTRICAL ASPECTS
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作者信息
- 1. Physical Electronics and Photonics, Microtechnology Center at Chalmers, Department of Microelectronics and Nanoscience, Chalmers University of Technology, Fysikgrnd 3, S -412 96 Gothenburg, Sweden;Physical Electronics and Photonics, Microtechnology Center at Chalmers, Department of Microelectronics and Nanoscience, Chalmers University of Technology, Fysikgrnd 3, S -412 96 Gothenburg, Sweden;National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics,Chinese Acadermy of Sciences, 500 Yutian Road, Shanghai 200083, China;National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics,Chinese Acadermy of Sciences, 500 Yutian Road, Shanghai 200083, China
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摘要
Abstract
A complete quantum mechanical model for GaAs/AlGaAs quantum well infrared photodetectors(QWIPs) was presented. The photocurrent was investigated by the optical transition(absorption coefficient)between the ground state and the excited states due to the nonzero component of the radiation field along the sample growth direction. By studying the inter-diffusion of the Al atoms across the GaAs/AlGaAs heterointer faces, the mobility of the drift-diffusion carriers in the excited states was calculated. As a result, the measurement results of the dark current and the photocurrent spectra are explained theoretically.关键词
quantum well infrared photodetector(QWIP)/inter-diffusion/carrier mobility/alloy scattering/wavefunction boundary conditionKey words
quantum well infrared photodetector(QWIP)/inter-diffusion/carrier mobility/alloy scattering/wavefunction boundary condition分类
信息技术与安全科学引用本文复制引用
..QUANTUM MECHANICAL MODEL AND SIMULATION OF GaAs/AlGaAs QUANTUM WELL INFRARED PHOTODETECTOR-Ⅱ ELECTRICAL ASPECTS[J].红外与毫米波学报,2002,21(6):401-407,7.
