发光学报2007，Vol.28Issue(3)：407-411,5.
MOVPE生长的InGaN/GaN单量子阱的光致发光和光吸收特性
Photoluminescence and Optical Absorption Properties of InGaN/GaN Single Quantum Well Grown by MOVPE
摘要
Abstract
Gallium nitride and its ternary alloys have been attracting much attention because of their unique physical and chemical properties and their great potentialities for semiconductor industrial applications, such as light emitting diodes(LEDs), laser diodes(LDs) operating from green to ultraviolet(UV), UV-detectors and microwave power devices. The primary object of this study is to investigate the influence of different thickness of Fixed-Indium-Content InGaN layer on the shift of the photoluminescence(PL) spectra and optical absorption of the whole system structure. Photoluminescence(PL) and absorption properties of the Fixed-Indium-Content InGaN/GaN heterojunction single quantum well (SQW) structures have been investigated using photoluminescence spectrum and ultraviolet-vi-sible spectrophotometer at room temperature, respectively. The films were grown by metal-organic vapor phase epitaxy (MOVPE), using GaN buffer layer on sapphire substrates. The width of InGaN layer (＜3 nm) in the SQW was varied while keeping other growth parameters fixed. Sample A has an InGaN active layer of thickness 1.5 nm, and Sample B has an InGaN active layer of thickness 2.5 nm. Two samples were capped with a 25 nm GaN layer. PL measurements show that the PL peak position (432 nm in Sample A and 465 nm in Sample B) was redshifted by 33 nm, the intensity was reduced about 8%, and the full width at half maximum (FWHM) of PL spectrum increases with increasing (1 nm) of the potential well layer width. The spectra of transmission and reflection show that transmission T is very high there can be only few reflection R as no absorption R+T exceeds 100% in the near infrared ranges for the sample with InGaN layer of thickness 1.5 nm. The reasons of these results are discussed. The significance of these studies is multifold and these results provide further information of importance toward the design optimization of optoelectronic devices employing the Ⅲ-nitrides.关键词
InGaN/GaN/单量子阱/光致发光/透射光谱/反射光谱Key words
InGaN/GaN/single quantum well/photoluminescence/transmission spectra/reflection spectra分类
数理科学引用本文复制引用
王玥,施卫,苑进社,贺训军,胡辉,姬广举..MOVPE生长的InGaN/GaN单量子阱的光致发光和光吸收特性[J].发光学报,2007,28(3):407-411,5.基金项目
Project supported by National Natural Science Foundation of China (10474078) （10474078）
国家自然科学基金资助项目(10474078) （10474078）
