半导体学报2006，Vol.27Issue(3)：413-418,6.
快速热处理工艺下直拉单晶硅中铜、镍对氧沉淀的影响
Impact of Transition-Metal Contamination on Oxygen Precipitation in Czochralski Silicon Under Rapid Thermal Processing
摘要
Abstract
The effects of the transition metals copper and nickel on oxygen precipitation in Czochralski silicon under a rapid thermal process are investigated. It is found that interstitial copper has almost no effect on oxygen precipitation, but copper precipitation markedly enhances oxygen precipitation. However, neither interstitial nickel nor nickel precipitation affects oxygen precipitation. The reasons for the effects of copper and nickel contamination on oxygen precipitation are discussed in light of oxygen precipitation nucleation theory.关键词
单晶硅/氧沉淀/Cu/NiKey words
Si/oxygen precipitation/Cu/Ni分类
信息技术与安全科学引用本文复制引用
吴冬冬,杨德仁,席珍强,阙端麟..快速热处理工艺下直拉单晶硅中铜、镍对氧沉淀的影响[J].半导体学报,2006,27(3):413-418,6.基金项目
高等学校博士学科点科研基金,浙江省自然科学基金(批准号:Y105468),及国家自然科学基金(批准号:90307010)资助项目Project supported by the Research Fund for the Doctoral Program of Higher Education (RFDP), the Natural Science Foundation of Zhejiang Province (No.Y105468),and the National Natural Science Foundation of China (No.90307010) （批准号:Y105468）
