首页|期刊导航|半导体学报|A novel electrical measurement method of peak junction temperature based on the excessive thermotaxis effect of low current

A novel electrical measurement method of peak junction temperature based on the excessive thermotaxis effect of low currentOA北大核心CSCDCSTPCD

A novel electrical measurement method of peak junction temperature based on the excessive thermotaxis effect of low current

中文摘要英文摘要

niform property of junction temperature distribution are analyzed successfully.

niform property of junction temperature distribution are analyzed successfully.

Zhu Yangjun;Miao Qinghai;Zhang Xinghua;Han Zhengsheng

Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaSchool of Physics, Shandong University, Jinan 250100, ChinaSchool of Physics, Shandong University, Jinan 250100, ChinaInstitute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

电子信息工程

peak junction temperaturemulti-step currentexcessive thermotaxis effect of low currentpower transistor

peak junction temperaturemulti-step currentexcessive thermotaxis effect of low currentpower transistor

《半导体学报》 2009 (9)

晶体管热谱学的基础研究

41-44,4

Project supported by the National Natural Science Foundation of China (No. 60476039) and the Director Foundation of Institute of Microelectronics of Chinese Academy of Sciences (No. 5408SA011001).

10.1088/1674-4926/30/9/094005

评论

您当前未登录!去登录点击加载更多...