半导体学报2009，Vol.30Issue(4)：41-44,4.DOI:10.1088/1674.4926/30/4/044006 PACC:6855;7340Q;7340T EEACC:2550;2560R
Photo-sensitive characteristics of negative resistance turn-around occurring in SIPTH
Photo-sensitive characteristics of negative resistance turn-around occurring in SIPTH
摘要
Abstract
Influences of light irradiation on the negative resistance turn-around characteristics of static induction photosensitive thyristor(SIPTH)have been experimentally and theoretically studied.As the gate current of SIPTH is increased by the light irradiation,the potential barrier in the channel is reduced due to the increase in voltage drop across the gate series resistance.Therefore.SIPTH Can be quickly switched from the blocking state to the conducting state by relatively low anode voltage.The optimal matching relation for controlling anode conducting voltage of SIPTH by light irradiation has also been represented.关键词
static induction photosensitive thyristors/gate series resistance/double injection effect/potential bar tier/light-generated carriersKey words
static induction photosensitive thyristors/gate series resistance/double injection effect/potential bar tier/light-generated carriers分类
信息技术与安全科学引用本文复制引用
Ji Tao,Yang Licheng,Li Hairong,He Shanhu,Li Siyuan..Photo-sensitive characteristics of negative resistance turn-around occurring in SIPTH[J].半导体学报,2009,30(4):41-44,4.基金项目
Project supported by the Training of Outstanding Young Teachers Project in Colleges in Shanghai(No.gjd-07037). （No.gjd-07037）
