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High Efficiency Al-Free 980nm InGaAs/InGaAsP/InGaP Strained Quantum Well Lasers

徐遵图杨国文张敬明马骁宇徐俊英沈光地陈良惠

半导体学报2000，Vol.21Issue(5)：417-420,4.

High Efficiency Al-Free 980nm InGaAs/InGaAsP/InGaP Strained Quantum Well Lasers

徐遵图 ¹杨国文 ¹张敬明 ¹马骁宇 ¹徐俊英 ¹沈光地 ²陈良惠¹

作者信息

1. Institute of Semiconductors, The Chinese Academy of Sciences, Beijing 100083, China
2. Beijing Optoelectronics Technology Laboratory and Department of Electronic Engineering,Beijing Polytechnique University, Beijing 100022, China
折叠

摘要

Abstract

High efficiency Al-free InGaAs/InGaAsP/InGaP lasers emitting at 980nm are fabricated by MOCVD. The lasers exhibit a high internal quantum efficiency of 95 % and a low internal loss of 1.8 cm-1. Low threshold current density of 190A/cm2 and high slope efficiency of 1.06W/A are obtained by lasers with 800μm cavitylength. A high characteristic temperature 210C is also obtained by replacing the GaAs barrier with high-bandgap InGaAsP barrier. The measured vertical and parallel divergence angle are 40° and 8°, respectively.

关键词

quantum well laser/high efficiency/Al-free PACC: 4255P/6855/7856/8115HCLC number: TN248.4 Document code: A Article ID: 0253-4177(2000)05-0417-04

Key words

quantum well laser/high efficiency/Al-free PACC: 4255P/6855/7856/8115HCLC number: TN248.4 Document code: A Article ID: 0253-4177(2000)05-0417-04

分类

信息技术与安全科学

引用本文复制引用

徐遵图,杨国文,张敬明,马骁宇,徐俊英,沈光地,陈良惠..High Efficiency Al-Free 980nm InGaAs/InGaAsP/InGaP Strained Quantum Well Lasers[J].半导体学报,2000,21(5):417-420,4.

基金项目

Project Supported by High Technology Research & Development Program of China (Contract No. 863-307-13-3). （Contract No. 863-307-13-3）

半导体学报

OA北大核心CSCDCSTPCD

ISSN：1674-4926

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