半导体学报2006，Vol.27Issue(3)：419-424,6.
蓝宝石衬底上侧向外延GaN中的位错降低
Dislocation Reduction in GaN on Sapphire by Epitaxial Lateral Overgrowth
摘要
Abstract
High quality GaN is grown on GaN substrate with stripe pattern by metalorganic chemical vapor deposition by means of epitaxial lateral overgrowth. AFM, wet chemical etching, and TEM experiments show that with a two-step ELOG procedure,the propagation of defects under the mask is blocked, and the coherently grown GaN above the window also experiences a drastic reduction in defect density. In addition, a grain boundary is formed at the coalescence boundary of neighboring growth fronts. The extremely low density of threading dislocations within wing regions makes ELOG GaN a potential template for the fabrication of nitride-based lasers with improved performance.关键词
金属有机物化学气相沉积/GaN/侧向外延/位错Key words
metalorganic chemical vapor deposition/GaN/epitaxial lateral overgrowth/dislocation分类
信息技术与安全科学引用本文复制引用
陈俊,王建峰,王辉,赵德刚,朱建军,张书明,杨辉..蓝宝石衬底上侧向外延GaN中的位错降低[J].半导体学报,2006,27(3):419-424,6.基金项目
国家高技术研究发展计划资助项目(批准号:2001AA313100)Project supported by the National High Technology Research and Development Program of China(No.2001AA313100) （批准号:2001AA313100）
