发光学报2003，Vol.24Issue(4)：421-425,5.
Si(100)和蓝宝石(0001)衬底上3C-SiC的Raman研究
Raman Investigations of 3C-SiC Films Grown on Si(100)and Sapphire (0001) by LPCVD
摘要
Abstract
The Raman measurements have been performed with the back-scattering geometry on the SiC films grown on Si (100) and sapphire (0001) by LPCVD. Typical TO and LO phonon peaks of 3C-SiC were observed for all the samples grown on Si and sapphire substrates, indicating the epilayers are 3C-SiC polytype. Using a free-standing 3C-SiC film removed from Si (100) as a free-stress sample, the stresses of 3C-SiC on Si (100) and sapphire (0001) were estimated according to the shift of TO and LO phonons.关键词
3C-SiC/Raman光谱/Si(100)/蓝宝石(0001)Key words
3C-SiC/Raman spectrum/Si (100)/sapphire (0001)分类
信息技术与安全科学引用本文复制引用
孙国胜,罗木昌,王雷,赵万顺,孙艳玲,曾一平,李晋闽,林兰英..Si(100)和蓝宝石(0001)衬底上3C-SiC的Raman研究[J].发光学报,2003,24(4):421-425,5.基金项目
国家基础研究专项基金(G20000683) （G20000683）
国家高技术研究与发展基金(2001AA311090)资助项目 （2001AA311090）
