半导体学报2000，Vol.21Issue(5)：431-436,6.
Unified MOSFET Short Channel Factor Using Variational Method
Unified MOSFET Short Channel Factor Using Variational Method
摘要
Abstract
A new natural gate length scale for MOSFET's is presented using Variational Method. Comparison of the short channel effects is conducted for the uniform channel doping bulk MOSFET, intrinsic channel doping bulk MOSFET, SOI MOSFET and double gated MOSFET. And the results are verified by the 2D numerical simulation. Taken all the 2-D effects on front gate dielectric, back gate dielectric and silicon film into account, the data validity of electrical equivalent oxide thickness is investigated by this model, as shows that it is valid only when the gate dielectric constant is relatively small.关键词
Poisson's equation/variational method/deep submicron/MOSFET/short channel effectKey words
Poisson's equation/variational method/deep submicron/MOSFET/short channel effect分类
信息技术与安全科学引用本文复制引用
陈文松,田立林,李志坚..Unified MOSFET Short Channel Factor Using Variational Method[J].半导体学报,2000,21(5):431-436,6.基金项目
Project Supported by National 9th Five-Year Plan on Science and Technology Program of China (Grant No. 97-760-03-01). （Grant No. 97-760-03-01）
