半导体学报2006，Vol.27Issue(3)：434-437,4.
采用新的T型发射极技术的自对准InP/GaInAs单异质结双极晶体管的性能
Performance of a Self-Aligned InP/GaInAs SHBT with a Novel T-Shaped Emitter
苏树兵 1刘训春 1刘新宇 1于进勇 1王润梅 1徐安怀 2齐鸣2
作者信息
- 1. 中国科学院微电子研究所,北京,100029
- 2. 中国科学院上海微系统与信息技术研究所,上海,200050
- 折叠
摘要
Abstract
A self-aligned InP/GaInAs single heterojunction bipolar transistor(HBT) is investigated using a novel T-shaped emitter. A U-shaped emitter layout, selective wet etching, laterally etched undercut, and an air-bridge are applied in this process. The device, which has a 2μm × 12μm U-shaped emitter area, demonstrates a common-emitter DC current gain of 170,an offset voltage of 0.2V,a knee voltage of 0.5V,and an open-base breakdown voltage of over 2V. The HBT exhibits good microwave performance with a current gain cutoff frequency of 85GHz and a maximum oscillation frequency of 72GHz. These results indicate that these InP/InGaAs SHBTs are suitable for low-voltage, low-power, and high-frequency applications.关键词
自对准发射极/磷化铟/单异质结双极晶体管/T型发射极/U型发射极图形Key words
self-alignment emitter/InP/single heterojunction bipolar transistor/T-shaped emitter/U-shaped emitter layout分类
信息技术与安全科学引用本文复制引用
苏树兵,刘训春,刘新宇,于进勇,王润梅,徐安怀,齐鸣..采用新的T型发射极技术的自对准InP/GaInAs单异质结双极晶体管的性能[J].半导体学报,2006,27(3):434-437,4.
